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BF493S Scheda tecnica(PDF) 1 Page - Motorola, Inc |
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BF493S Scheda tecnica(HTML) 1 Page - Motorola, Inc |
1 / 4 page 1 Motorola Small–Signal Transistors, FETs and Diodes Device Data High Voltage Transistor PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –350 Vdc Collector – Base Voltage VCBO –350 Vdc Emitter – Base Voltage VEBO –6.0 Vdc Collector Current — Continuous IC –500 mAdc Total Device Dissipation @ TA = 25°C Derate above 25 °C PD 625 5.0 Watts mW/ °C Total Device Dissipation @ TC = 25°C Derate above 25 °C PD 1.5 12 Watts mW/ °C Operating and Storage Junction Temperature Range TJ, Tstg – 55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (1) (IC = –1.0 mAdc, IB = 0) V(BR)CEO –350 — Vdc Collector – Base Breakdown Voltage (IC = –100 mAdc, IE = 0) V(BR)CBO –350 — Vdc Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0) V(BR)EBO –6.0 — Vdc Collector Cutoff Current (VCE = –250 Vdc) ICES — –10 nAdc Emitter Cutoff Current (VEB = –6.0 Vdc, IC = 0) IEBO — 0.1 mAdc Collector Cutoff Current (VCB = –250 Vdc, IE = 0, TA = 25°C) (VCB = –250 Vdc, IE = 0, TA = 100°C) ICBO — — –0.005 –1.0 mAdc 1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. Order this document by BF493S/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BF493S CASE 29–04, STYLE 1 TO–92 (TO–226AA) 1 2 3 © Motorola, Inc. 1996 COLLECTOR 3 2 BASE 1 EMITTER |
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