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STP3N150 Scheda tecnica(PDF) 1 Page - STMicroelectronics

Il numero della parte STP3N150
Spiegazioni elettronici  N-channel 1500 V, 6 廓, 2.5 A, PowerMESH??Power MOSFET
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

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February 2009
Rev 6
1/16
16
STFV3N150 , STFW3N150
STP3N150, STW3N150
N-channel 1500 V, 6
Ω, 2.5 A, PowerMESH™ Power MOSFET
TO-220, TO-220FH, TO-247, TO-3PF
Features
100% avalanche tested
Intrinsic capacitances and Qg minimized
High speed switching
Fully isolated TO-3PF and TO-220FH plastic
packages
Creepage distance path is 5.4 mm (typ.) for
TO-3PF
Creepage distance path is > 4 mm for
TO-220FH
Application
Switching applications
Description
Using the well consolidated high voltage MESH
OVERLAY™ process, STMicroelectronics has
designed an advanced family of very high voltage
Power MOSFETs with outstanding performances.
The strengthened layout coupled with the
company’s proprietary edge termination structure,
gives the lowest RDS(on) per area, unrivalled gate
charge and switching characteristics.
Figure 1.
Internal schematic diagram
Type
VDSS
RDS(on) max
ID
Pw
STFV3N150
STFW3N150(1)
STP3N150
STW3N150
1.
All data which refers solely to the TO-3PF package is
preliminary
1500 V
1500 V
1500 V
1500 V
< 9
< 9
< 9
< 9
2.5 A
2.5 A
2.5 A
2.5 A
30 W
83 W
140 W
140 W
TO-220
TO-220FH
1
2
3
1
2
3
TO-247
1
2
3
1
2
3
TO-3PF
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STFV3N150
3N150
TO-220FH
Tube
STFW3N150
3N150
TO-3PF
Tube
STP3N150
3N150
TO-220
Tube
STW3N150
3N150
TO-247
Tube
www.st.com


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