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2SC4350 Scheda tecnica(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SC4350 Scheda tecnica(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 3 page JMnic Product Specification 2 Silicon NPN Power Transistors 2SC4350 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0 100 V V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0; 100 V V(BR)EBO Emitter-base breakdown voltage IE=5mA; IC=0; 7 V VCEsat Collector-emitter saturation voltage IC=5A; IB=5mA 1.5 V VBEsat Base-emitter saturation voltage IC=5A; IB=5mA 2.0 V ICBO Collector cut-off current VCB=100V ;IE=0 1 μA IEBO Emitter cut-off current VEB=7V; IC=0 5.0 mA hFE DC current gain IC=5A ; VCE=2V 2000 20000 hFE classifications M L K 2000-5000 4000-10000 8000-20000 |
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