2SC3157 datasheet(2/3 Pages) JMNIC

Il numero della parte	2SC3157

Spiegazioni elettronici	Silicon NPN Power Transistors

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Produttore elettronici	JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]

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Product Specification

2

Silicon NPN Power Transistors

2SC3157

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-emitter sustaining voltage

IC=5A ;IB1=0.5A;L=1mH

100

V

VCEsat

Collector-emitter saturation voltage

IC=5A; IB=0.5A

0.6

V

VBEsat

Base-emitter saturation voltage

IC=5A; IB=0.5A

1.5

V

ICBO

Collector cut-off current

VCB=100V; IE=0

0.01

mA

ICEX

Collector cut-off current

VCE=100V; VBE=1.5V

Ta=125℃

0.01

1.0

mA

IEBO

Emitter cut-off current

VEB=5V; IC=0

0.01

mA

hFE-1

DC current gain

IC=0.5A ; VCE=5V

40

hFE-2

DC current gain

IC=3A ; VCE=5V

40

200

hFE-3

DC current gain

IC=5A ; VCE=5V

20

Switching times

ton

Turn-on time

0.5

μs

ts

Storage time

1.5

μs

tf

Fall time

IC=5A;IB1=-IB2=0.5A ,

RL=10Ω;VCC≈50V

0.5

μs

hFE-2 classifications

M

L

K

40-80

60-120

100-200

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2SC3157 Scheda tecnica(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd.

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