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2SC3117 Scheda tecnica(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SC3117 Scheda tecnica(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 4 page JMnic Product Specification 2 Silicon NPN Power Transistors 2SC3117 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=1mA; RBE=∞ 160 V V(BR)CBO Collector-base breakdown voltage IC=10μA; IE=0 180 V V(BR)EBO Emitter-base breakdown voltage IE=10μA ; IC=0 6 V VCEsat Collector-emitter saturation voltage IC=500mA; IB=50mA 0.13 0.45 V VBEsat Base-emitter saturation voltage IC=500mA; IB=50mA 0.85 1.2 V ICBO Collector cut-off current VCB=120V; IE=0 1.0 μA IEBO Emitter cut-off current VEB=4V; IC=0 1.0 μA hFE-1 DC current gain IC=100mA ; VCE=5V 100 400 hFE-2 DC current gain IC=10mA ; VCE=5V 90 fT Transition frequency IC=50mA ; VCE=10V 120 MHz Cob Output capacitance IE=0 ; VCB=10V;f=1MHz 22 pF hFE-1 Classifications R S T 100-200 140-280 200-400 |
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