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CDCS503 Scheda tecnica(PDF) 3 Page - Texas Instruments

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Il numero della parte CDCS503
Spiegazioni elettronici  Clock Buffer/Clock Multiplier With Optional SSC
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Produttore elettronici  TI [Texas Instruments]
Homepage  http://www.ti.com
Logo TI - Texas Instruments

CDCS503 Scheda tecnica(HTML) 3 Page - Texas Instruments

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ABSOLUTE MAXIMUM RATINGS
RECOMMENDED OPERATING CONDITIONS
DEVICE CHARACTERISTICS
CDCS503
www.ti.com .................................................................................................................................................................................................. SCAS872 – MARCH 2009
over operating free-air temperature range (unless otherwise noted)
VALUE
UNIT
VDD
Supply voltage range
–0.5 to 4.6
V
VIN
Input voltage range(1)
–0.5 to 4.6
V
Vout
Output voltage range(1)
–0.5 to 4.6
V
IIN
Input current (VI < 0, VI > VDD)
20
mA
Iout
Continuous output current
50
mA
TST
Storage temperature range
–65 to 150
°C
TJ
Maximum junction temperature
125
°C
(1)
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
MIN
NOM
MAX
UNIT
VDD
Supply voltage
3.0
3.6
V
FS = 0
8
32
fIN
Input frequency
MHz
FS = 1
8
27
VIL
Low level input voltage LVCMOS
0.3 VDD
V
VIH
High level input voltage LVCMOS
0.7 VDD
V
VI
Input voltage threshold LVCMOS
0.5 VDD
V
CL
Output load test LVCMOS
15
pF
IOH/IOL
Output current
±12
mA
TA
Operating free-air temperature
-40
85
°C
over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
fout = 20 MHz; FS = 0, no SSC
19
IDD
Device supply current
mA
fout = 70 MHz; FS = 1, SSC = 2%
22
FS = 0
8
32
fOUT
Output frequency
MHz
FS = 1
32
108
IIH
LVCMOS input current
VI = VDD; VDD = 3.6 V
10
µA
IIL
LVCMOS input current
VI = 0 V; VDD = 3.6 V
–10
µA
IOH = - 0.1mA
2.9
VOH
LVCMOS high-level output voltage
IOH = - 8mA
2.4
V
IOH = - 12mA
2.2
IOL = 0.1mA
0.1
VOL
LVCMOS low-level output voltage
IOL = 8mA
0.5
V
IOL = 12mA
0.8
IOZ
High- impedance-state output current
OE = Low
–2
2
µA
tJIT(C-C)
Cycle to cycle jitter(1)
fout = 108 MHz; FS = 1,
110
ps
SSC = 1%, 10000 Cycles
tr/tf
Rise and fall time(1)
20%–80%
0.75
ns
Odc
Output duty cycle
45%
55%
fMOD
Modulation frequency
30
kHz
(1)
Measured with Test Load, see Figure 2.
Copyright © 2009, Texas Instruments Incorporated
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