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2SC2371 Scheda tecnica(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SC2371 Scheda tecnica(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 3 page JMnic Product Specification 2 Silicon NPN Power Transistors 2SC2371 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=30mA ;IB=3m A 1.5 V VBE Base-emitter on voltage IC=10mA ; VCE=10V 1.2 V V(BR)CBO Collector-base breakdown voltage IC=100μA;IE=0 300 V V(BR)CEO Collector-emitter breakdown voltage IC=1mA; IB=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=100μA; IC=0 6 V hFE DC current gain IC=10mA ; VCE=10V 40 250 ICBO Collector cut-off current VCB=200V; IE=0 0.1 μA IEBO Emitter cut-off current VEB=4V; IC=0 0.1 μA COB Output capacitance IE=0; VCB=30V;f=1MHz 3 pF fT Transition frequency IE=10mA ; VCB=30V 50 MHz |
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