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2SA1220 Scheda tecnica(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SA1220 Scheda tecnica(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 4 page JMnic Product Specification 2 Silicon PNP Power Transistors 2SA1220 2SA1220A CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=-1A; IB=-0.2A -0.7 V VBEsat Base-emitter saturation voltage IC=-1A ;IB=-0.2A -1.3 V ICBO Collector cut-off current VCB=-120V; IE=0 -1 μA IEBO Emitter cut-off current VEB=-3V; IC=0 -1 μA hFE-1 DC current gain IC=-5mA ; VCE=-5V 35 hFE-2 DC current gain IC=-0.3A ; VCE=-5V 60 320 Cob Output capacitance IE=0 ; VCB=-10V f=1MHz 26 pF fT Transition frequency IC=-0.2A ; VCE=5V 175 MHz hFE-2 Classifications R Q P 60-120 100-200 160-320 |
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