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TC211 Scheda tecnica(PDF) 5 Page - Texas Instruments |
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TC211 Scheda tecnica(HTML) 5 Page - Texas Instruments |
5 / 13 page TC211 192- × 165-PIXEL CCD IMAGE SENSOR SOCS008B – JANUARY 1990 2-5 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 recommended operating conditions MIN NOM MAX UNIT Supply voltage, ADB 11 12 13 V Substrate bias voltage 0 V † High level 1.5 2 2.5 † IAG Intermediate level‡ –10 –5 2 † Low level –11 –10 –9 Input voltage V † SRG High level 1.5 2 2.5 V Input voltage, VI† SRG Low level –11 –10 –9 V High level 4 4.5 5 ABG Intermediate level‡ –3 –2.5 –2 Low level – 7.5 –7 – 6.5 IAG 1.5 Clock frequency, fclock SRG 10 MHz ABG 2 t1 Time interval, SRG ↓ to IAG↑ 70 ns t2 Time interval, IAG ↑ to SRG transfer pulse ↑ 0 ns tW1 Pulse duration, IAG high 350 ns tW2 Pulse duration, SRG transfer pulse high 350 ns t3 Time interval, IAG ↓ to SRG transfer pulse ↓ 350 ns t4 Time interval, SRG transfer pulse ↓ to SRG clock pulse ↑ 70 ns Capacitive load OUT 12 pF Operating free-air temperature, TA –10 45 °C † The algebraic convention, in which the least-positive (most negative) value is designated minimum, is used in this data sheet for clock voltage levels. ‡ Adjustment is required for optimal performance. |
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