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SN74TVC16222DGGR Scheda tecnica(PDF) 7 Page - Texas Instruments |
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SN74TVC16222DGGR Scheda tecnica(HTML) 7 Page - Texas Instruments |
7 / 15 page SN74TVC16222A 22BIT VOLTAGE CLAMP SCDS087G − APRIL 1999 − REVISED APRIL 2005 7 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 APPLICATION INFORMATION electrical characteristics The electrical characteristics of the NMOS transistors used in the TVC devices are illustrated by TI SPICE simulations. Figure 4 shows the test configuration for the TI SPICE simulations. The results, shown in Figures 5 and 6, show the current through a pass transistor versus the voltage at the source for different reference voltages. The plots of the dc characteristics clearly reveal that the device clamps at the desired reference voltage for the varying device environments. Figure 5 shows the V-I characteristics with low reference voltages and a reference-transistor drain-supply voltage of 3.3 V. To further investigate the spread of the V-I characteristic curves, VREF was held at 2.5 V and IREF was increased by raising VDDREF (see Figure 6). The result was a tighter grouping of the V-I curves. VDPASS VREF RDREF GATE VBIAS VDDREF RDPASS VDDPASS VSPASS Figure 4. TI SPICE-Simulation Schematic and Voltage-Node Names |
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