BD137T datasheet(2/2 Pages) SEMTECH_ELEC

Il numero della parte	BD137T

Spiegazioni elettronici	NPN Silicon Epitaxial Power Transistor

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Produttore elettronici	SEMTECH_ELEC [SEMTECH ELECTRONICS LTD.]

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Dated : 22/03/2006

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SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

BD135T / BD137T / BD139T

Characteristics at Ta=25 OC

Parameter

Symbol

Min.

Max.

Unit

DC Current Gain

at VCE = 2 V, IC = 5 mA

at VCE = 2 V, IC = 500 mA

at VCE = 2 V, IC = 150 mA

-6

-10

-16

-25

hFE

25

40

63

100

160

-

100

160

250

400

-

Collector Emitter Sustaining Voltage

at IC = 30 mA

BD135T

at IC=10mA

BD137T

BD139T

VCEO(sus)

45

60

80

-

V

Collector Cutoff Current

at VCB = 30 V

ICBO

-

0.1

µA

Emitter Cutoff Current

at VEB = 5 V

IEBO

-

10

µA

Collector Emitter Saturation Voltage

at IC = 500 mA, IB = 50 mA

VCE(sat)

-

0.5

V

Base Emitter On Voltage

at IC = 500 mA, VCE = 2 V

VBE(on)

-

1

V

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