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2SC4097 Scheda tecnica(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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2SC4097 Scheda tecnica(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
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2 / 3 page  Elektronische Bauelemente 2SC4097 32V, 0.5A Medium Power Transistor ELECTRICAL CHARACTERISTICS (Ta = 25 ) TYPE NUMBER SYMBOL Min. Typ. Max. UNIT TEST CONDITIONS Collector-Base Breakdown Voltage BVCBO 40 - - V IC = 100 µA Collector-Emitter Breakdown Voltage BVCEO 32 - - V IC = 1 mA Emitter-Base Breakdown Voltage BVEBO 5 - - V IE = 100 µA Collector Cutoff Current ICBO - - 1 µA VCB = 20 V Emitter Cutoff Current IEBO - - 1 µA VEB = 4 V Collector-Emitter Saturation Voltage VCE (sat) - - 0.4 V IC / IB = 500 mA / 50 mA DC Current Transfer Ratio hFE 82 - 390 - VCE = 3 V, IC = 100 mA VCE = 5 V, IE = -20 mA, Transition Frequency fT - 250 - MHz f = 100 MHz VCB = 10 V, IE = 0 A, Output Capacitance Cob - 6.0 - pF f = 1 MHz hFE VALUES ARE CLASSIFIED AS FOLLOWS: ITEM P Q R hFE 82 ~ 180 120 ~ 270 180 ~ 390 Marking CP CQ CR ELECTRICAL CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 0.8 0.2 0.4 0.9 0.7 0.5 1.1 0.3 1.0 0.6 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 T a 100 25 80 25 55 VCE 6V BASE TO EMITTER VOLTAGE : VBE ( V) Fig.1 Grounded emitter propagation characteristics 1 0 2345 0 100 50 0.50m A 0.45m A 0.40m A 0.35mA 0.30mA 0.25mA 0.20mA 0.15mA 0.10mA 0.05mA IB =0A Ta =25 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.2 Grounded emitter output characteris tics ( ) 1 0 2345 0 500 400 300 200 100 2mA 1.8mA 1.6mA 1.4mA 1.2mA 0.2mA 0.4mA 0.6mA 0.8mA 1.0mA IB =0A Ta =25 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.3 Grounded emitter output characteris tics ( ) = = - - 01-Jun-2002 Rev. A Page 2 of 3 |
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