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2SC2712 Scheda tecnica(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SC2712 Scheda tecnica(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 1 page Any changing of specification will not be informed individual 2SC2712 NPN Silicon General Purpose Transistor *Power Dissipation PCM: 150 mW (Tamb=25 C) o *Collector Current ICM: 150 mA *Collector-Base Voltage V(BR)CBO: 60 V *Operating and TJ,TSTG: -55~+150 C o http://www.SeCoSGmbH.com Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT C o FEATURES Storage Junction Temperature Range Collector Base Emitter K J C H L A B S G V 3 1 2 D Top View 1 2 3 *RoHS Compliant Product Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm SOT-23 01-Jun-2002 Rev. A Page 1 of 1 Collector-base breakdown voltage V(BR)CBO Ic= 100µA , IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA , IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE= 100µA, IC=0 5 V Collector cut-off current ICBO VCB= 60 V, IE=0 0.1 µA Emitter cut-off current IEBO VEB=5V, IC=0 0.1 µA DC current gain hFE VCE=6V, IC=2mA 70 700 Collector-emitter saturation voltage VCE(sat) IC= 100mA, IB=10mA 0.1 0.25 V Transition frequency fT VCE=10V, IC= 1mA 80 MHz Output capacitance Cob VCB=10V, IE=0,f=1 MHz 2.0 3.5 pF Noise Figure NF VCE=6V,IC=0.1mA,f=1kHz, Rg=10k Ω 1.0 10 dB CLASSIFICATION OF hFE Rank O Y GR BL Range 70-140 120-240 200-400 350-700 Marking LO LY LG LL A suffix of "-C" specifies halogen & lead-free |
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