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2SC2411 Scheda tecnica(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SC2411 Scheda tecnica(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 2 page Any changing of specification will not be informed individual 2SC2411 NPN Transistor Plastic-Encapsulate Transistors P n n RoHS Compliant Product ower Dissipation PCM: 200 mW ( Tamb= 25 C) o FEATURES Collector MAXIMUM RATINGS* TA=25 unless otherwise noted ℃ Symbol Parameter Value Units Base Emitter Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm SOT-23 K J C H L A B S G V 3 1 2 D Top View http://www.SeCoSGmbH.com Elektronische Bauelemente 1 2 3 VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA PC Collector Dissipation 200 mW TJ, Tstg Junction and Storage Temperature -55-150 ℃ 01-Jun-2002 Rev. A Page 1 of 2 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100µA,IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO Ic= 1mA,IB=0 32 V Emitter-base breakdown voltage V(BR)EBO IE=100µA,IC=0 5 V Collector cut-off current ICBO VCB=20V,IE=0 1 µA Emitter cut-off current IEBO VEB=4V,IC=0 1 µA DC current gain hFE VCE=3V,IC=100mA 82 390 Collector-emitter saturation voltage VCE(sat) IC=500mA,IB=50mA 0.4 V Transition frequency fT VCE=5V,IC=20mA,f=100MHz 250 MHz Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 6.0 pF CLASSIFICATION OF hFE Rank P Q R Range 82-180 120-270 180-390 Marking CP CQ CR A suffix of "-C" specifies halogen & lead-free |
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