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2SA1015 Scheda tecnica(PDF) 1 Page - Dc Components |
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2SA1015 Scheda tecnica(HTML) 1 Page - Dc Components |
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1 / 1 page 2SA1015 DISCRETE SEMICONDUCTORS R DC COMPONENTS CO., LTD. TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in driver stage of AF amplifier general purpose amplification. Pinning 1 = Emitter 2 = Collector 3 = Base TO-92 Dimensions in inches and (millimeters) .022(0.56) .014(0.36) .050 (1.27) .148(3.76) .132(3.36) Typ .190(4.83) .170(4.33) .100 (2.54) Typ .050 (1.27) Typ .022(0.56) .014(0.36) .190(4.83) .170(4.33) .500 (12.70) Min 2oTyp 5oTyp. 2oTyp 3 2 1 5oTyp. Rank O Y GR BL Range 70~140 120~240 200~400 350~700 Classification of hFE1 Characteristic Symbol Min Typ Max Unit Test Conditions Collector-Base Breakdown Volatge BVCBO -50 - - V IC=-100 µA, IE=0 Collector-Emitter Breakdown Voltage BVCEO -50 - - V IC=-1mA, IB=0 Emitter-Base Breakdown Volatge BVEBO -5 - - V IE=-10 µA, IC=0 Collector Cutoff Current ICBO - - -0.1 µA VCB=-50V, IE=0 Emitter Cutoff Current IEBO - - -0.1 µA VEB=-5V, IC=0 Collector-Emitter Saturation Voltage(1) VCE(sat) - - -0.3 V IC=-100mA, IB=-10mA Base-Emitter Saturation Voltage(1) VBE(sat) - - -1.1 V IC=-100mA, IB=-10mA DC Current Gain(1) hFE1 70 - 700 - IC=-2mA, VCE=-6V hFE2 25 - - - IC=-150mA, VCE=-6V Transition Frequency fT 80 - - MHz IC=-1mA, VCE=-10V, f=100MHz Output Capacitance Cob - - 7 pF VCB=-10V, f=1MHz, IE=0 Electrical Characteristics (Ratings at 25oC ambient temperature unless otherwise specified) (1)Pulse Test: Pulse Width 380 µs, Duty Cycle 2% Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current IC -150 mA Total Power Dissipation PD 400 mW Junction Temperature TJ +150 o C Storage Temperature TSTG -55 to +150 o C Absolute Maximum Ratings(TA=25oC) |
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