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BDX66 Scheda tecnica(PDF) 1 Page - Savantic, Inc. |
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BDX66 Scheda tecnica(HTML) 1 Page - Savantic, Inc. |
1 / 3 page SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BDX66 DESCRIPTION ·With TO-3 package ·High current ·DARLINGTON APPLICATIONS ·Designed for power amplification and switching applications. PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -16 A ICM Collector current(peak) -20 A IB Base current -0.25 A PT Total power dissipation TC=25 150 W Tj Junction temperature -55~200 Tstg Storage temperature -55~200 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance from junction to case 1.17 /W Fig.1 simplified outline (TO-3) and symbol |
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