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2SC4595 Scheda tecnica(PDF) 2 Page - Savantic, Inc. |
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2SC4595 Scheda tecnica(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC4595 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA , IB=0 60 V V(BR)EBO Emitter-base breakdown voltage IE=50µA , IC=0 5 V VCEsat Collector-emitter saturation voltage IC=6A, IB=0.3A 0.3 V VBEsat Base-emitter saturation voltage IC=6A, IB=0.3A 1.2 V ICBO Collector cut-off current VCB=100V, IE=0 10 µA IEBO Emitter cut-off current VEB=5V; IC=0 10 µA hFE DC current gain IC=2A ; VCE=2V 60 320 fT Transition frequency IC=0.5A ; VCE=10V 120 MHz hFE Classifications D E F 60-120 100-200 160-320 |
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