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2SC3678 Scheda tecnica(PDF) 2 Page - Savantic, Inc. |
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2SC3678 Scheda tecnica(HTML) 2 Page - Savantic, Inc. |
2 / 4 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC3678 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 800 V VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2A 0.5 V VBEsat Base-emitter saturation voltage IC=1A; IB=0.2A 1.2 V ICBO Collector cut-off current VCB=800V; IE=0 100 µA IEBO Emitter cut-off current VEB=7V; IC=0 100 µA hFE DC current gain IC=1A ; VCE=4V 10 30 Cob Output capacitance IE=0 ; VCB=10V;f=1MHz 50 pF fT Transition frequency IE=-0.3A ; VCE=12V 6 MHz Switching times ton Turn-on time 1.0 µs ts Storage time 5.0 µs tf Fall time IC=1A; IB1=0.15A;IB2=-0.5A RL=250B,VCC=250V 1.0 µs |
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