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2SC3170 Scheda tecnica(PDF) 2 Page - Savantic, Inc. |
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2SC3170 Scheda tecnica(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC3170 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A , L=25mH 400 V VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.6A 1.0 V VBEsat Base-emitter saturation voltage IC=3A ;IB=0.6A 1.5 V ICBO Collector cut-off current VCB=500V; IE=0 100 µA IEBO Emitter cut-off current VEB=5V; IC=0 100 µA hFE-1 DC current gain IC=0.1A ; VCE=5V 15 hFE-2 DC current gain IC=3A ; VCE=5V 8 fT Transition frequency IC=0.5A ; VCE=10V 8 MHz Switching times ton Turn-on time 1.0 µs tstg Storage time 3.0 µs tf Fall time IC=3A ; IB1=-IB2=0.6A VCC=100V 1.0 µs |
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