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2SD1380 Scheda tecnica(PDF) 2 Page - Savantic, Inc. |
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2SD1380 Scheda tecnica(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1380 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;IB=0 32 V V(BR)CBO Collector-base breakdown voltage IC=50µA ;IE=0 40 V V(BR)EBO Emitter-base breakdown voltage IE=50µA ;IC=0 5 V VCEsat Collector-emitter saturation voltage IC=2.0A; IB=0.2A 0.5 0.8 V ICBO Collector cut-off current VCB=20V; IE=0 1 µA IEBO Emitter cut-off current VEB=4V; IC=0 1 µA hFE DC current gain IC=0.5A ; VCE=3V 82 390 fT Transition frequency IE=-0.5A ; VCE=5V 100 MHz COB Collector output capacitance IE=0; f=1MHz ; VCB=10V 30 pF hFE Classifications P Q R 82-180 120-270 180-390 |
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