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2SD1265A Scheda tecnica(PDF) 2 Page - Savantic, Inc. |
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2SD1265A Scheda tecnica(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1265 2SD1265A CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2SD1265 60 VCEO(SUS) Collector-emitter sustaining voltage 2SD1265A IC=0.2A , L=25mH 80 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A 1.0 V VBE Base-emitter on voltage IC=1A ; VCE=3V 1.2 V ICBO Collector cut-off current VCB=20V; IE=0 30 µA IEBO Emitter cut-off current VEB=8V; IC=0 1 mA hFE-1 DC current gain IC=0.1A ; VCE=3V 40 hFE-2 DC current gain IC=1A ; VCE=3V 30 160 hFE-2 Classifications Q P O 30-60 500-100 80-160 |
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