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2SD2012 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD2012 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD2012 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 60 V VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.2A 1.0 V VBE Base-emitter on voltage IC=0.5A;VCE=5V 1.0 V ICBO Collector cut-off current VCB=60V; IE=0 100 μA IEBO Emitter cut-off current VEB=7V; IC=0 100 μA hFE-1 DC current gain IC=0.5A ; VCE=5V 100 320 hFE-2 DC current gain IC=2A ; VCE=5V 20 fT Transition frequency IC=1A ; VCE=5V 3 MHz COB Collector output capacitance f=1MHz;VCB=10V 35 pF |
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