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2SD1712 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD1712 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 3 page Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1712 DESCRIPTION · ·With TO-3PFa package ·Complement to type 2SB1157 ·High transition frequency fT ·Satisfactory linearity of hFE ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 5 A ICP Collector current-peak 8 A TC=25℃ 60 PC Collector power dissipation Ta=25℃ 3 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ |
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