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2SD1431 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1431 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1431 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-emitter saturation voltage IC=4A; IB=0.8A 5.0 V VBE(sat) Base-emitter saturation voltage IC=4A; IB=0.8A 1.5 V ICBO Collector cut-off current VCB=500V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 1 mA hFE DC current gain IC=1A ; VCE=5V 8 fT Transition freuqency IC=0.1A ; VCE=10V 3 MHz COB Output capacitance IE=0 ; VCB=10V;f=1.0MHz 165 pF tf Fall time IC=4A;IB1=0.8A 1.0 μs |
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