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2SC3025 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC3025 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC3025 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=∞ 800 V V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0 6 V VCE(sat) Collector-emitter saturation voltage IC=5A; IB=1.25A 2.0 V VBE(sat) Base-emitter saturation voltage IC=5A; IB=1.25A 1.5 V ICES Collector cut-off current VCE=1500V; RBE=∞ 0.5 mA Switching times ts Storage time 4.0 μs tf Fall time IC=5A; IB1=1A;IB2=-2.5A 0.5 μs |
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