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2SC2877 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC2877 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC2877 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 40 V VCE(sat) Collector-emitter saturation voltage IC=2.0A; IB=0.2A 0.8 V VBE Base-emitter on voltage IC=0.5A ; VCE=2V 1.0 V ICBO Collector cut-off current VCB=40V; IE=0 0.1 μA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 μA hFE-1 DC current gain IC=0.5A ; VCE=2V 80 240 hFE-2 DC current gain IC=2.5A ; VCE=2V 25 fT Transition frequency IC=0.5A ; VCE=2V 100 MHz hFE-1 Classifications O Y 80-160 120-240 |
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