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2N4913 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2N4913 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Website:www.iscsemi.cn 2 isc Silicon NPN Power Transistors 2N4913 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 200mA ; IB= 0 40 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.25A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A 1.5 V VBE(on) Base-Emitter On Voltage IC= 2.5A; VCE= 2V 1.4 V ICEO Collector Cutoff Current VCE= 40V; IB= 0 1.0 mA ICBO Collector Cutoff Current VCB= 40V; IE= 0 0.1 mA ICEV Collector Cutoff Current VCE= 40V; VBE(off)= -1.5V VCE= 40V; VBE(off)= -1.5V, TC=150℃ 0.1 2.0 mA IEBO Emitter Cutoff Current VEB=-5V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 2.5A; VCE= 2V 25 100 hFE-2 DC Current Gain IC= 5A; VCE= 2V 7 fT Current-Gain —Bandwidth Product IC= 1A; VCE= 10V; ftest= 1.0MHz 4 MHz |
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