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STU407D Scheda tecnica(PDF) 4 Page - SamHop Microelectronics Corp.

Il numero della parte STU407D
Spiegazioni elettronici  Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)
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Produttore elettronici  SAMHOP [SamHop Microelectronics Corp.]
Homepage  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STU407D Scheda tecnica(HTML) 4 Page - SamHop Microelectronics Corp.

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F igure 2. Transfer C haracteristics
F igure 4. On-R esistance Variation with
Drain C urrent and Temperature
ID, Drain C urrent (A)
V GS , G ate-to-S ource Voltage (V )
4
60
50
40
30
20
10
0
-55 C
15
9
6
3
0
0
0.8
1.6
2.4
3.2
4.0
4.8
25 C
2.0
1.8
1.6
1.4
1.2
1.0
0.0
0
25
50
75
T j( C )
100
125
V GS =10V
ID=8A
T j, J unction T emperature ( C )
F igure 1. Output C haracteristics
V DS , Drain-to-S ource Voltage (V )
25
20
15
10
5
0
0
0.5
1
1.5
2
2.5
3
V GS =3V
V GS =3.5V
T j=125 C
VGS=10V
F igure 3. On-R esistance vs. Drain C urrent
and G ate V oltage
6
12
18
24
30
1
V GS =10V
V GS =4.5V
V GS =4.5V
ID=6A
V GS =8V
Parameter
Symbol
Condition
Min Typ Max Unit
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
VSD
VGS = 0V, Is =8A
N-Ch
0.94
1.2
-0.87
-1.2
VGS = 0V, Is =-6A
P-Ch
V
b
C
Notes
b.Guaranteed by design,not subject to production testing.
a.Pulse Test:PulseWidth 300μs,Duty Cycle 2%.
N-Channel
V GS =4.5V
12
150
S T U407D
30


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