STP434S datasheet(2/8 Pages) SAMHOP

Il numero della parte	STP434S

Spiegazioni elettronici	N-Channel Logic Level Enhancement Mode Field Effect Transistor

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Produttore elettronici	SAMHOP [SamHop Microelectronics Corp.]

Homepage	http://www.samhop.com.tw

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2 / 8 page

Symbol

Min

Typ

Max

Units

BVDSS

40

V

1

IGSS

±100

nA

VGS(th)

1.3

V

7.6

gFS

18

S

CISS

1160

pF

COSS

211

pF

CRSS

135

pF

Qg

17

nC

24

59

11

tD(ON)

20

ns

tr

ns

tD(OFF)

ns

tf

ns

VDS=20V,VGS=0V

SWITCHING CHARACTERISTICS

VDD=20V

ID=1A

VGS=10V

RGEN=3.3 ohm

Total Gate Charge

Rise Time

Turn-Off Delay Time

Fall Time

Turn-On Delay Time

m ohm

VGS=10V , ID=30A

VDS=10V , ID=30A

Input Capacitance

Output Capacitance

DYNAMIC CHARACTERISTICS

RDS(ON)

Drain-Source On-State Resistance

Forward Transconductance

IDSS

uA

Gate Threshold Voltage

VDS=VGS , ID=250uA

VDS=32V , VGS=0V

VGS= ±20V , VDS=0V

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

OFF CHARACTERISTICS

Parameter

Conditions

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

Reverse Transfer Capacitance

ON CHARACTERISTICS

VGS=4.5V , ID=25A

9.2

8.8

11.5

m ohm

c

f=1.0MHz

c

STB/P434S

Ver 1.0

www.samhop.com.tw

Nov,14,2008

2

1.7

3

VSD

nC

Qgs

nC

Qgd

2.1

5

Gate-Drain Charge

Gate-Source Charge

Diode Forward Voltage

VDS=20V,ID=30A,

VGS=10V

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

VGS=0V,IS=10A

0.84

1.3

V

IS

Maximum Continuous Drain-Source Diode Forward Current

10

A

Notes

nC

10

VDS=20V,ID=30A,VGS=10V

VDS=20V,ID=30A,VGS=4.5V

b

a.Surface Mounted on FR4 Board,t < 10sec.

b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.

c.Guaranteed by design, not subject to production testing.

d.Starting TJ=25°C,L=0.5mH,VDD = 20V.(See Figure13)

_

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