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IRF840I Scheda tecnica(PDF) 4 Page - Advanced Power Electronics Corp. |
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IRF840I Scheda tecnica(HTML) 4 Page - Advanced Power Electronics Corp. |
4 / 5 page Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4/4 IRF840I 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.01 0.1 1 10 100 1 10 100 1000 V DS , Drain-to-Source Voltage (V) T c =25 o C Single Pulse 1s 100us 1ms 10ms 100m 0 2 4 6 8 10 12 0 10 203040 5060 Q G , Total Gate Charge (nC) I D =8A V DS =100V V DS =250V V DS =400V 10 100 1000 10000 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) f=1.0MHz C iss C oss C rss td(on) tr td(off) tf VDS VGS 10% 90% Q VG 10V QGS QGD QG Charge DC |
Codice articolo simile - IRF840I |
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Descrizione simile - IRF840I |
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