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IRF630N Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited

Il numero della parte IRF630N
Spiegazioni elettronici  isc N-Channel MOSFET Transistor
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Produttore elettronici  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
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IRF630N Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc N-Channel MOSFET Transistor
IRF630N
DESCRIPTION
·Drain Current –ID=9.3A@ TC=25℃
·Drain Source Voltage-
: VDSS= 200V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.3Ω(Max)
·Fast Switching Speed
·Low Drive Requirement
APPLICATIONS
·This device is n-channel, enhancement mode, power MOSFET
designed especially for high power,
high speed applications,
such as switching power supplies,UPS, AC and DC motor con-
trols, relay and solenoid drivers and high energy pulse circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
200
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
9.3
A
PD
Total Dissipation@TC=25℃
82
W
Tj
Max. Operating Junction Temperature
175
℃
Tstg
Storage Temperature Range
-55~175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.83
℃/W
Rth j-a
Thermal Resistance,Junction to Ambient
62
℃/W
isc Website：www.iscsemi.cn


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