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BU406F Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BU406F Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BU406F/407F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BU406F 200 VCEO(SUS) Collector-Emitter Sustaining Voltage BU407F IC= 200mA ; IB= 0; L= 25mH 150 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.2 V ICES Collector Cutoff Current VCE= VCESmax; VBE= 0 0.05 1 mA BU406F VCE= 250V; VBE= 0 VCE= 350V; VBE= 0;TJ=150℃ 0.1 1 ICES Collector Cutoff Current BU407F VCE= 200V; VBE= 0 VCE= 200V; VBE= 0;TJ=150℃ 0.1 1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1 mA fT Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 10V 4 MHz toff Turn-Off Time IC= 5A; IB1= -IB2= 0.5A 0.75 μs isc Website:www.iscsemi.cn 2 |
Codice articolo simile - BU406F |
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Descrizione simile - BU406F |
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