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2SC4536 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC4536 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 6 page INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4536 DESCRIPTION ·Low Noise NF = 1.5 dB TYP. @VCE = 10 V, IC = 10 mA, f = 1 GHz ·Low Distortion IM2 = 57.5 dB TYP. @VCE = 10 V, IC = 50 mA IM3 = 82 dB TYP. @VCE = 10 V, IC = 50 mA APPLICATIONS ·Designed for use in middle power , low distortion low noise figure RF amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 3.0 V IC Collector Current-Continuous 0.25 A PC Collector Power Dissipation @TC=25℃ 2 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc Website:www.iscsemi.cn |
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