MJ11019 datasheet(1/2 Pages) ISC

Il numero della parte	MJ11019

Spiegazioni elettronici	isc Silicon PNP Darlington Power Transistor

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Produttore elettronici	ISC [Inchange Semiconductor Company Limited]

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlington Power Transistor

M

J11019

DESCRIPTION

·High DC Current Gain-

: hFE = 400(Min)@ IC= -10A

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS) = -200V(Min)

·Low Collector-Emitter Saturation Voltage-

: VCE(sat) = -2.0V(Max)@ IC= -10A

= -3.4V(Max)@ IC= -15A

·Complement to Type MJ11020

APPLICATIONS

·Designed for general purpose amplifiers ,low frequency

switching and motor control applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-200

V

VCEO

Collector-Emitter Voltage

-200

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-15

A

ICM

Collector Current-Peak

-30

A

IB

B

Base Current- Continuous

-0.5

A

PC

Collector Power Dissipation

@TC=25℃

175

W

Tj

Junction Temperature

175

℃

Tstg

Storage Temperature Range

-65~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

0.86

℃/W

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