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2SK2111 Scheda tecnica(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Il numero della parte 2SK2111
Spiegazioni elettronici  MOS Field Effect Transistor
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Produttore elettronici  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Homepage  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SK2111 Scheda tecnica(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  2SK2111 Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd  
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background image
SMD Type
IC
www.kexin.com.cn
1
MOSFET
SMD Type
1.80+0.1
-0.1
4.50+0.1
-0.1
0.53+0.1
-0.1
0.48+0.1
-0.1
1.50+0.1
-0.1
0.44+0.1
-0.1
3.00+0.1
-0.1
SOT-89
Unit: mm
1. Base
2. Collector
3. Emiitter
1. Source
2. Drain
3. Gate
1
2
3
1Gate
2Drain
3Source
MOS Field Effect Transistor
2SK2111
Features
Low on-resistance
RDS(on)=0.6
MAX.@VGS=4.0V,ID=0.5A
High switching speed
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain to source voltage
VDSS
60
V
Gate to source voltage
VGSS
20
V
ID
1.0
A
Idp
2.0
A
Power dissipation
*
PD
2.0
W
Channel temperature
Tch
150
Storage temperature
Tstg
-55to+150
*16cm
2X0.7mm,ceramic substrate used
Drain current
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Drain cut-off current
IDSS
VDS=60V,VGS=0
1.0
A
Gate leakage current
IGSS
VGS=
20V,VDS=0
10
A
Gate threshold voltage
VGS(th)
VDS=10V,ID=1mA
0.8
1.4
2.0
V
Forward transfer admittance
Yfs
VDS=10V,ID=0.5A
0.4
S
VGS=4.0V,ID=0.5A
0.32
0.6
VGS=10V,ID=0.5A
0.24
0.45
Input capacitance
Ciss
170
pF
Output capacitance
Coss
87
pF
Reverse transfer capacitance
Crss
32
pF
Turn-on delay time
td(on)
2.8
ns
Rise time
tr
2.3
ns
Turn-off delay time
td(off)
55
ns
Fall time
tf
27
ns
VDS=10V,VGS=0,f=1MHZ
ID=0.5A,VGS(on)=10V,RL=50
,RG=10
,VDD=25V
Drain to source on-state resistance
RDS(on)
Marking
Marking
NU


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