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KDB15N50 Scheda tecnica(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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KDB15N50 Scheda tecnica(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 2 page SMD Type MOSFET 1 www.kexin.com.cn 1.27+0.1 -0.1 1.27+0.1 -0.1 5.08+0.1 -0.1 0.1max 2.54+0.2 -0.2 2.54 4.57+0.2 -0.2 0.4+0.2 -0.2 0.81+0.1 -0.1 TO-263 Unit: mm 1Gate 2Drain 3 Source N-Channel SMPS Power MOSFET KDB15N50(FDB15N50) Features Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness Reduced rDS(ON) Reduced Miller Capacitance and Low Input Capacitance Improved Switching Speed with Low EMI Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS 500 V Gate to source voltage VGSS 30 V Drain current TC=25 ID 15 A Drain current-pulsed Idp 60 A Power dissipation 300 W Derate above 25 2 W/ Thermal Resistance Junction to Ambient RèJA 62 /W Channel temperature Tch 175 Storage temperature Tstg -55to+175 PD |
Codice articolo simile - KDB15N50 |
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Descrizione simile - KDB15N50 |
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