KAV103 datasheet(1/1 Pages) KEXIN

Il numero della parte	KAV103

Spiegazioni elettronici	High Voltage,General Purpose Diode

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Produttore elettronici	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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SMD Type

Diodes

1

2.64REF

0.50

0.35

3.60

3.30

1.50

1.30

LL-34

Unit: mm

www.kexin.com.cn

Features

Silicon Epitaxial Planar Diodes

For general purpose

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Working Inverse Voltage

Wiv

200

V

Average Rectified Current

IO

200

mA

DC Forward Current

IF

500

mA

Recurrent Peak Forward Current

if

600

mA

Peak Forward Surge Current

Pulse Width = 1.0 second

1

Pulse Width = 1.0 microsecond

4

Total Power Dissipation at TA = 25

500

mW

Linear Derating Factor from TA = 25

3.33

mW/

Thermal Resistance Junction-to-Ambient

R JA

350

/W

Operating Junction Temperature

TJ

-65to+200

Storage Temperature

Tstg

-65to+200

PD

A

iF(surge)

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Breakdown Voltage

BV

IR = 100 uA

250

V

VR = 200 V

100

nA

VR = 200 V TA = 150

100

uA

IF = 100 mA

1.00

V

IF = 200 mA

1.25

V

Capacitance

CT

VR = 0.0 V,f = 1.0 MHz

5.0

pF

Reverse Recovery Time

TRR

IF=IR =30 mA ,IRR= 1.0 mA,RL = 100

50

ns

IR

Reverse Leakage

VF

Forward Voltage

High Voltage,General Purpose Diode

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