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KDS5670 Scheda tecnica(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Il numero della parte KDS5670
Spiegazioni elettronici  60V N-Channel PowerTrench TM MOSFETl
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Produttore elettronici  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Homepage  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

KDS5670 Scheda tecnica(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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SMD Type
IC
www.kexin.com.cn
1
SMD Type
IC
60V N-Channel PowerTrenchTM MOSFET
KDS5670
Features
10 A, 60 V. RDS(ON) = 0.014
@VGS =10V
RDS(ON) = 0.017
@VGS =6V
Low gate charge
Fast switching speed.
High performance trench technology for extremely low RDS(ON)
High power and current handling capability
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGS
20
V
Drain Current Continuous (Note 1a)
10
A
Drain Current Pulsed
50
A
Power dissipation
(Note 1a)
2.5
Power dissipation
(Note 1b)
1.2
Power dissipation
(Note 1c)
1
Operating and Storage Temperature Range
TJ,TSTG
-55to175
Thermal Resistance Junction to Ambient (Note 1a)
R JA
50
/W
Thermal Resistance Junction to Case (Note 1)
R JC
25
/W
ID
PD
W


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