1N4148-TAP datasheet(1/4 Pages) VISHAY

Il numero della parte	1N4148-TAP

Spiegazioni elettronici	Silicon Epitaxial Planar Diodes

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Produttore elettronici	VISHAY [Vishay Siliconix]

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1N4148.1N4448

Vishay Telefunken

Rev. 2, 01-Apr-99

1 (4)

www.vishay.de

• FaxBack +1-408-970-5600

Document Number 85521

Silicon Epitaxial Planar Diodes

Features

D Electrically equivalent diodes: 1N4148 – 1N914

1N4448 – 1N914B

Applications

Extreme fast switches

94 9367

Absolute Maximum Ratings

Tj = 25_C

Parameter

Test Conditions

Type

Symbol

Value

Unit

Repetitive peak reverse voltage

VRRM

100

V

Reverse voltage

VR

75

V

Peak forward surge current

tp=1ms

IFSM

2

A

Repetitive peak forward current

IFRM

500

mA

Forward current

IF

300

mA

Average forward current

VR=0

IFAV

150

mA

Power dissipation

l=4mm, TL=45°C

PV

440

mW

l=4mm, TLx25°C

PV

500

mW

Junction temperature

Tj

200

°C

Storage temperature range

Tstg

–65...+200

°C

Maximum Thermal Resistance

Tj = 25_C

Parameter

Test Conditions

Symbol

Value

Unit

Junction ambient

l=4mm, TL=constant

RthJA

350

K/W

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