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NZT753 Scheda tecnica(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Il numero della parte NZT753
Spiegazioni elettronici  PNP Current Driver Transistor
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Produttore elettronici  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Homepage  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

NZT753 Scheda tecnica(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  NZT753 Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
Transistors
1
www.kexin.com.cn
SOT-223
Unit: mm
3.00+0.1
-0.1
0.70+0.1
-0.1
2.9
4.6
6.50+0.2
-0.2
3.50+0.2
-0.2
0.90+0.2
-0.2
7.00+0.3
-0.3
12
4
3
1 Base
2 Collector
3 Emitter
4 Collector
PNP Current Driver Transistor
NZT753
Features
Absolute Maximum Ratings Ta = 25
unless otherwise noted
Parameter
Symbol
Rating
Unit
Collector-Emitter Voltage
VCEO
-100
V
Collector-Base Voltage
VCBO
-120
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current - Continuous
IC
-4
A
Operating and Storage Junction Temperature Range
TJ,TSTG
-55to+150
Total Device Dissipation
1.2
W
Derate above 25
9.7
mW/
Thermal Resistance, Junction to Ambient
RèJA
103
/W
PD
Electrical Characteristics Ta = 25
unless otherwise stated
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-Emitter Breakdown Voltage
BVCEO
IC = -10mA, IB =0
-100
V
Collector-Base Breakdown Voltage
BVCBO
IC = -100ìA, IE =0
-120
V
Emitter-Base Breakdown Voltage
BVEBO
IE = -100ìA, IC =0
-5.0
V
VCB = -100V, IE =0
-0.1
ìA
TA = 100
-10
ìA
Emitter-Base Cutoff Current
IEBO
VEB =-4V, IC =0
-0.1
ìA
VCE =-2.0V, IC = -50mA
70
VCE =-2.0V, IC = -500mA
100
300
VCE =-2.0V, IC = -1.0A
55
Collector-Emitter Saturation Voltage
VCE(sat)
IC = -1.0A, IC = -50mA
-0.3
V
Base-Emitter Saturation Voltage
VBE(sat)
IC = -1.0A, IB = -100mA
-1.25
V
Base-Emitter On Voltage
VBE(on)
VCE = -2.0V, IC = -1.0A,
-1.0
V
Transition Frequency
fT
VCE =-5V, IC = -100mA, f = 100MHz
75
MHz
*Pulse Test: Pulse Width
300ìs, Duty Cycle
2.0%
ICBO
Collector-Base Cutoff Current
hFE
DC Current Gain


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