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TC4425 Scheda tecnica(PDF) 3 Page - TelCom Semiconductor, Inc

Il numero della parte TC4425
Spiegazioni elettronici  3A DUAL HIGH-SPEED POWER MOSFET DRIVERS
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Produttore elettronici  TELCOM [TelCom Semiconductor, Inc]
Homepage  http://www.telcom-semi.com
Logo TELCOM - TelCom Semiconductor, Inc

TC4425 Scheda tecnica(HTML) 3 Page - TelCom Semiconductor, Inc

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4-239
TELCOM SEMICONDUCTOR, INC.
7
6
5
4
3
1
2
8
3A DUAL HIGH-SPEED
POWER --MOSFET DRIVERS
TC4423
TC4424
TC4425
Figure 1. Inverting Driver Switching Time
Figure 2. Noninverting Driver Switching Time
OUTPUT
INPUT
0.1
µF CERAMIC
+5V
INPUT
10%
90%
10%
90%
10%
90%
16V
OUTPUT
tD1
tF
C = 1800pF
L
1
µF
WIMA
MKS-2
VDD = 16V
0V
0V
TC4423
(1/2 TC4425)
Test Circuit
1
2
tD2
tR
INPUT: 100 kHz,
square wave,
tRISE = tFALL
≤ 10 nsec
90%
10%
10%
10%
tD1
+5V
INPUT
16V
OUTPUT
0V
0V
90%
90%
OUTPUT
INPUT
0.1
µF CERAMIC
C = 1800pF
L
1
µF
WIMA
MKS-2
VDD = 16V
TC4424
(1/2 TC4425)
Test Circuit
1
2
tD2
tR
tF
INPUT: 100 kHz,
square wave,
tRISE = tFALL
≤ 10 nsec
ELECTRICAL CHARACTERISTICS (Cont.):
Over operating temperature range with 4.5V
≤ VDD ≤ 18V, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Input
VIH
Logic 1 High Input Voltage
2.4
V
VIL
Logic 0 Low Input Voltage
0.8
V
IIN
Input Current
0V
≤ VIN ≤ VDD
– 10
10
µA
Output
VOH
High Output Voltage
VDD – 0.025
V
VOL
Low Output Voltage
0.025
V
RO
Output Resistance, High
IOUT = 10 mA, VDD = 18V
3.7
8
RO
Output Resistance, Low
IOUT = 10 mA, VDD = 18V
4.3
8
IPK
Peak Output Current
3
A
IREV
Latch-Up Protection
Duty Cycle
≤ 2%
1.5
A
Withstand Reverse Current
t
≤ 300 µsec
Switching Time (Note 1)
tR
Rise Time
Figure 1, CL = 1800 pF
28
60
nsec
tF
Fall Time
Figure 1, CL = 1800 pF
32
60
nsec
tD1
Delay Time
Figure 1, CL = 1800 pF
32
100
nsec
tD2
Delay Time
Figure 1, CL = 1800 pF
38
100
nsec
Power Supply
IS
Power Supply Current
VIN = 3V (Both Inputs)
2
3.5
mA
VIN = 0V (Both Inputs)
0.2
0.3
NOTE: 1. Switching times guaranteed by design.


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