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TC4421 Scheda tecnica(PDF) 2 Page - TelCom Semiconductor, Inc |
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TC4421 Scheda tecnica(HTML) 2 Page - TelCom Semiconductor, Inc |
2 / 6 page 4-232 TELCOM SEMICONDUCTOR, INC. 9A HIGH-SPEED MOSFET DRIVERS TC4421 TC4422 ELECTRICAL CHARACTERISTICS: T A = 25°C with 4.5V ≤ VDD ≤ 18V unless otherwise specified. Symbol Parameter Test Conditions Min Typ Max Unit Input VIH Logic 1 Input Voltage 2.4 1.8 — V VIL Logic 0 Input Voltage — 1.3 0.8 V IIN Input Current 0V ≤ VIN ≤ VDD – 10 — 10 µA Output VOH High Output Voltage See Figure 1 VDD – 0.025 — — V VOL Low Output Voltage See Figure 1 — — 0.025 V RO Output Resistance, High VDD = 18V, IO = 10 mA — 1.4 — Ω RO Output Resistance, Low VDD = 18V, IO = 10 mA — 0.9 1.7 Ω IPK Peak Output Current VDD = 18V — 9 — A IDC Continuous Output Current 10V ≤ VDD ≤ 18V, TC = 25° 2A (TC4421/22 CAT only) IREV Latch-Up Protection Duty Cycle ≤ 2% >1500 — — mA Withstand Reverse Current t ≤ 300 µsec Switching Time (Note 1) tR Rise Time Figure 1, CL = 10,000 pF — 60 75 nsec tF Fall Time Figure 1, CL = 10,000 pF — 60 75 nsec tD1 Delay Time Figure 1 — 30 60 nsec tD2 Delay Time Figure 1 — 33 60 nsec Power Supply IS Power Supply Current VIN = 3V — 0.2 1.5 mA VIN = 0V — 55 150 µA VDD Operating Input Voltage 4.5 — 18 V Input VIH Logic 1 Input Voltage 2.4 — — V VIL Logic 0 Input Voltage — — 0.8 V IIN Input Current 0V ≤ VIN ≤ VDD – 10 — 10 µA ABSOLUTE MAXIMUM RATINGS* Power Dissipation, TA ≤ 70°C PDIP .................................................................. 730W CerDIP ............................................................ 800mW 5-Pin TO-220 ...................................................... 1.6W Power Dissipation, TA ≤ 70°C 5-Pin TO-220 (With Heat Sink) ......................... 1.60W Derating Factors (To Ambient) PDIP ............................................................. 8mW/ °C CerDIP ....................................................... 6.4mW/ °C 5-Pin TO-220 .............................................. 12mW/ °C Thermal Impedance (To Case) 5-Pin TO-220 RQJ-C ..................................................... 10°C/W Storage Temperature ............................ – 65 °C to +150°C Operating Temperature (Chip) ................................ 150 °C Operating Temperature (Ambient) C Version ............................................... 0 °C to +70°C E Version .......................................... – 40 °C to +85°C M Version ....................................... – 55 °C to +125°C Lead Temperature (10 sec) ..................................... 300 °C Supply Voltage ............................................................20V Input Voltage .......................... (VDD + 0.3V) to (GND - 5V) Input Current (VIN > VDD) ........................................50 mA *Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under "Absolute Maximum Ratings" may cause perma- nent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. |
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