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TC1014 Scheda tecnica(PDF) 2 Page - TelCom Semiconductor, Inc

Il numero della parte TC1014
Spiegazioni elettronici  50mA CMOS LDO WITH SHUTDOWN AND REFERENCE BYPASS
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Produttore elettronici  TELCOM [TelCom Semiconductor, Inc]
Homepage  http://www.telcom-semi.com
Logo TELCOM - TelCom Semiconductor, Inc

TC1014 Scheda tecnica(HTML) 2 Page - TelCom Semiconductor, Inc

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TC1014
2
50mA CMOS LDO WITH SHUTDOWN
AND REFERENCE BYPASS
PRELIMINARY INFORMATION
TC1014-01-6/5/97
ABSOLUTE MAXIMUM RATINGS*
Input Voltage ................................................................. 7V
Output Voltage .................................. (– 0.3) to (VIN + 0.3)
Power Dissipation .................... Internally Limited (Note 7)
Operating Temperature .................... – 40
°C < TJ < 125°C
Storage Temperature ............................ – 65
°C to +150°C
Maximum Voltage On Any Pin .......... VIN + 0.3V to – 0.3V
*Stresses beyond those listed under "Absolute Maximum Ratings" may
cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond
those indicated in the operational sections of the specifications is not
implied. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
ELECTRICAL CHARACTERISTICS: VIN = VOUT + 1V, IL = 100µA, CL = 3.3µF, SHDN > VIH, TA = 25
°C, unless otherwise noted.
Boldface type specifications apply for junction temperatures of – 40
°C to +125°C.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
VIN
Input Operating Voltage
6.5
V
IOUTMAX
Maximum Output Current
50
——
mA
VOUT
Output Voltage
Note 1
VR – 2.5%
VR ±0.5%
VR + 2.5%
V
TCVOUT
VOUT Temperature Coefficient
Note 2
20
ppm/
°C
40
∆VOUT/∆VIN
Line Regulation
(VR + 1V) < VIN < 6V
0.01
%
∆VOUT/VOUT
Load Regulation
IL = 1.0mA to IOUTMAX
0.5
%
(Note 3)
VIN – VOUT
Dropout Voltage (Note 4)
IL = 100µA—
5
mV
IL = 20mA
65
IL = 50mA
95
(Note 4)
IGND
Ground Pin Current
IL = IOUTMAX, (Note 5)
——
0
µA
IIN
Supply Current
SHDN = VIH, IL = 0
50
µA
IINSD
Shutdown Supply Current
SHDN = 0V
0.05
µA
PSRR
Power Supply Rejection Ratio
FRE ≤ 1kHz
64
dB
IOUTSC
Output Short Circuit Current
VOUT = 0V
200
400
mA
∆VOUT/∆PD
Thermal Regulation
Note 6
0.04
%/W
eN
Output Noise
IL = IOUTMAX
260
nV/
√Hz
470pF from Bypass to GND
SHDN Input
VIH
SHDN Input High Threshold
VIN = 2.5V to 6.5V
45
%VIN
VIL
SHDN Input Low Threshold
VIN = 2.5V to 6.5V
15
%VIN
NOTES: 1. VR is the regulator output voltage setting. VR = 2.5V, 2.7V, 3.0V, 3.3V, 5.0V.
2. TCVOUT = (VOUTMAX – VOUTMIN) x 10
6
VOUT x ∆T
3. Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load
range from 1.0mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the
thermal regulation specification.
4. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V
differential.
5. Ground pin current is the regulator pass transistor gate current. The total current drawn from the input supply is the sum of the load
current, ground current and supply current (i.e. IIN = ISUPPLY + IGND + ILOAD).
6. Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load
or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10msec.
7. The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e. TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to
initiate thermal shutdown. Please see
Thermal Considerations section of this data sheet for more details.
.


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