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IRF6N60FP Scheda tecnica(PDF) 1 Page - Suntac Electronic Corp.

Il numero della parte IRF6N60FP
Spiegazioni elettronici  POWER MOSFET
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Produttore elettronici  SUNTAC [Suntac Electronic Corp.]
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IRF6N60FP Scheda tecnica(HTML) 1 Page - Suntac Electronic Corp.

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GENERAL DESCRIPTION
FEATURES
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage-blocking capability
without degrading performance over time. In addition, this
advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy
efficient design also offers a drain-to-source diode with a
fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and
PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage
transients.
‹
Robust High Voltage Termination
‹
Avalanche Energy Specified
‹
Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
‹
Diode is Characterized for Use in Bridge Circuits
‹
IDSS Specified at Elevated Temperature
PIN CONFIGURATION
SYMBOL
TO-220/TO-220FP
Front View
1
23
D
S
G
N-Channel MOSFET
IRF6N60
POWER
MOSFET
Page 1


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