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BAY135-TAP Scheda tecnica(PDF) 2 Page - Vishay Siliconix |
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BAY135-TAP Scheda tecnica(HTML) 2 Page - Vishay Siliconix |
2 / 4 page www.vishay.com 2 Document Number 85552 Rev. 1.7, 19-Feb-07 BAY135 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Typical Characteristics Tamb = 25 °C, unless otherwise specified Package Dimensions in millimeters (inches): DO35 Parameter Test condition Symbol Min Typ. Max Unit Forward voltage IF = 100 mA VF 1000 mV Reverse current E ≤ 300 lx, V R IR 3nA E ≤ 300 lx, V R, Tj = 125 °C IR 0.5 µA E ≤ 300 lx, V R = 60 V IR 1nA Breakdown voltage IR = 5 µA, tp/T = 0.01, tp = 0.3 ms V(BR) 140 V Diode capacitance VR = 0, f = 1 MHz CD 5pF Figure 1. Reverse Current vs. Junction Temperature 040 80 120 160 1 10 100 1000 10000 Tj - Junction Temperature (°C) 200 94 9079 Scattering Limit VR = VRRM Figure 2. Forward Current vs. Forward Voltage 0 0.4 0.8 1.2 1.6 0.1 1 10 100 1000 VF - Forward Voltage (V) 2.0 94 9078 Scattering Limit Tj =25 °C 94 9366 26 min. (1.024) 3.9 max. (0.154) 26 min. (1.024) Cathode Identification Rev. 6 - Date: 29.January 2007 Document no.: 6.560-5004.02-4 |
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