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TSHF5410 Scheda tecnica(PDF) 2 Page - Vishay Siliconix

Il numero della parte TSHF5410
Spiegazioni elettronici  High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero
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Produttore elettronici  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

TSHF5410 Scheda tecnica(HTML) 2 Page - Vishay Siliconix

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For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81303
180
Rev. 1.2, 04-Sep-08
TSHF5410
Vishay Semiconductors
High Speed Infrared Emitting Diode, RoHS
Compliant, 890 nm, GaAlAs Double Hetero
Note
Tamb = 25 °C, unless otherwise specified
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
Note
Tamb = 25 °C, unless otherwise specified
Junction temperature
Tj
100
°C
Operating temperature range
Tamb
- 40 to + 85
°C
Storage temperature range
Tstg
- 40 to + 100
°C
Soldering temperature
t
≤ 5 s, 2 mm from case
Tsd
260
°C
Thermal resistance junction/ambient
J-STD-051, leads 7 mm,
soldered on PCB
RthJA
230
K/W
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
0
20
40
60
80
100
120
140
160
180
010
20
30
40
50
60
70
80
90
100
21211
T
amb - Ambient Temperature (°C)
R
thJA = 230 K/W
0
20
40
60
80
100
120
0
10
203040
506070
80
90 100
T
amb - Ambient Temperature (°C)
21212
R
thJA = 230 K/W
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Forward voltage
IF = 100 mA, tp = 20 ms
VF
1.4
1.6
V
IF = 1 A, tp = 100 µs
VF
2.3
V
Temperature coefficient of VF
IF = 1 mA
TKVF
- 1.8
mV/K
Reverse current
VR = 5 V
IR
10
µA
Junction capacitance
VR = 0 V, f = 1 MHz, E = 0
Cj
125
pF
Radiant intensity
IF = 100 mA, tp = 20 ms
Ie
45
70
135
mW/sr
IF = 1 A, tp = 100 µs
Ie
700
mW/sr
Radiant power
IF = 100 mA, tp = 20 ms
φ
e
50
mW
Temperature coefficient of
φ
e
IF = 100 mA
TK
φ
e
- 0.35
%/K
Angle of half intensity
ϕ
± 22
deg
Peak wavelength
IF = 100 mA
λ
p
890
nm
Spectral bandwidth
IF = 100 mA
Δλ
40
nm
Temperature coefficient of
λ
p
IF = 100 mA
TK
λ
p
0.25
nm/K
Rise time
IF = 100 mA
tr
30
ns
Fall time
IF = 100 mA
tf
30
ns
Cut-off frequency
IDC = 70 mA, IAC = 30 mA pp
fc
12
MHz
Virtual source diameter
d
2.1
mm


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