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TSHA4400 Scheda tecnica(PDF) 1 Page - Vishay Siliconix |
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TSHA4400 Scheda tecnica(HTML) 1 Page - Vishay Siliconix |
1 / 5 page Document Number: 81017 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com Rev. 1.6, 16-Sep-08 147 Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs TSHA4400, TSHA4401 Vishay Semiconductors DESCRIPTION The TSHA440. series are infrared, 875 nm emitting diodes in GaAlAs technology, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1 • Dimensions (in mm): Ø 3 • Peak wavelength: λ p = 875 nm • High reliability • Angle of half intensity: ϕ = ± 20° • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si photodetectors • Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC APPLICATIONS • Infrared remote control and free air data transmission systems with comfortable radiation angle • This emitter series is dedicated to systems with panes in transmission space between emitter and detector, because of the low absorbtion of 875 nm radiation in glass Note Test conditions see table “Basic Characteristics” Note MOQ: minimum order quantity Note Tamb = 25 °C, unless otherwise specified 94 8636 PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λ P (nm) tr (ns) TSHA4400 20 ± 20 875 600 TSHA4401 30 ± 20 875 600 ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TSHA4400 Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1 TSHA4401 Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1 ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage VR 5V Forward current IF 100 mA Peak forward current tp/T = 0.5, tp = 100 µs IFM 200 mA Surge forward current tp = 100 µs IFSM 2A Power dissipation PV 180 mW Junction temperature Tj 100 °C Operating temperature range Tamb - 40 to + 85 °C Storage temperature range Tstg - 40 to + 100 °C Soldering temperature t ≤ 5 s, 2 mm from case Tsd 260 °C Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB RthJA 300 K/W |
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