SI5519DU-T1-GE3 datasheet(8/12 Pages) VISHAY

Il numero della parte	SI5519DU-T1-GE3

Spiegazioni elettronici	N- and P-Channel 20-V (D-S) MOSFET

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Produttore elettronici	VISHAY [Vishay Siliconix]

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Document Number: 74406

S-81449-Rev. B, 23-Jun-08

Vishay Siliconix

Si5519DU

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0

5

10

15

20

0

1234

5

VDS - Drain-to-Source Voltage (V)

VGS = 1.5 V

VGS = 2 V

VGS = 2.5 V

VGS = 5 V thru 3 V

0.00

0.04

0.08

0.12

0.16

0.20

0

5

10

15

20

VGS = 2.5 V

ID - Drain Current (A)

VGS = 4.5 V

0

2

4

6

8

10

02

4

6

8

10

12

ID = 5.4 A

Qg - Total Gate Charge (nC)

VDS = 10 V

VGS = 16 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0.0

0.5

1.0

1.5

2.0

0.0

0.5

1.0

1.5

2.0

VGS - Gate-to-Source Voltage (V)

TC = 25 °C

TC = 125 °C

TC = - 55 °C

Crss

Ciss

0

200

400

600

800

04

8

12

16

20

Coss

VDS - Drain-to-Source Voltage (V)

0.6

0.8

1.0

1.2

1.4

1.6

- 50

- 25

0

25

50

75

100

125

150

TJ - Junction Temperature (°C)

VGS = 4.5 V

ID = 4 A

VGS = 2.5 V

ID = 4 A

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