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SI5519DU Scheda tecnica(PDF) 1 Page - Vishay Siliconix

Il numero della parte SI5519DU
Spiegazioni elettronici  N- and P-Channel 20-V (D-S) MOSFET
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Produttore elettronici  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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Vishay Siliconix
Si5519DU
Document Number: 74406
S-81449-Rev. B, 23-Jun-08
www.vishay.com
1
N- and P-Channel 20-V (D-S) MOSFET
FEATURES
Halogen-free
TrenchFET® Power MOSFETs
APPLICATIONS
Portable DC-DC Applications
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
ID (A)
a
Qg (Typ.)
N-Channel
20
0.036 at VGS = 4.5 V
6.0
5.4 nC
0.063 at VGS = 2.5 V
6.0
P-Channel
- 20
0.064 at VGS = - 4.5 V
- 6.0
6.0 nC
0.095 at VGS = - 2.5 V
- 6.0
Marking Code
EB
XXX
Lot Traceability
and Date Code
Part #
Code
Bottom View
PowerPAK ChipFET Dual
Ordering Information: Si5519DU-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
D1
G1
S1
S2
G2
D2
P-Channel MOSFET
8
7
6
5
1
2
3
4
D1
D1
D2
D2
S1
G1
S2
G2
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Reliability Manual for profile. The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated)
as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to
ensure adequade bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 105 °C/W.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
VDS
20
- 20
V
Gate-Source Voltage
VGS
± 12
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
6.0a
- 6.0a
A
TC = 70 °C
6.0a
- 6.0a
TA = 25 °C
6.0a, b, c
- 4.8b, c
TA = 70 °C
4.9b, c
- 3.8b, c
Pulsed Drain Current
IDM
25
- 20
Source Drain Current Diode Current
TC = 25 °C
IS
6.0a
- 6.0a
TA = 25 °C
1.9b, c
- 1.9b, c
Maximum Power Dissipation
TC = 25 °C
PD
10.4
10.4
W
TC = 70 °C
6.6
6.6
TA = 25 °C
2.27b, c
2.27b, c
TA = 70 °C
1.45b, c
1.45b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)d, e
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
N-Channel
P-Channel
Unit
Typ.
Max.
Typ.
Max.
Maximum Junction-to-Ambientb, f
t
≤ 5 s
RthJA
43
55
43
55
°C/W
Maximum Junction-to-Case (Drain)
Steady State
RthJC
9.5
12
9.5
12
RoHS
COMPLIANT


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