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SI5519DU Scheda tecnica(PDF) 1 Page - Vishay Siliconix |
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SI5519DU Scheda tecnica(HTML) 1 Page - Vishay Siliconix |
1 / 12 page Vishay Siliconix Si5519DU Document Number: 74406 S-81449-Rev. B, 23-Jun-08 www.vishay.com 1 N- and P-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free • TrenchFET® Power MOSFETs APPLICATIONS • Portable DC-DC Applications PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) a Qg (Typ.) N-Channel 20 0.036 at VGS = 4.5 V 6.0 5.4 nC 0.063 at VGS = 2.5 V 6.0 P-Channel - 20 0.064 at VGS = - 4.5 V - 6.0 6.0 nC 0.095 at VGS = - 2.5 V - 6.0 Marking Code EB XXX Lot Traceability and Date Code Part # Code Bottom View PowerPAK ChipFET Dual Ordering Information: Si5519DU-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET D1 G1 S1 S2 G2 D2 P-Channel MOSFET 8 7 6 5 1 2 3 4 D1 D1 D2 D2 S1 G1 S2 G2 Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Reliability Manual for profile. The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequade bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 105 °C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 20 - 20 V Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 6.0a - 6.0a A TC = 70 °C 6.0a - 6.0a TA = 25 °C 6.0a, b, c - 4.8b, c TA = 70 °C 4.9b, c - 3.8b, c Pulsed Drain Current IDM 25 - 20 Source Drain Current Diode Current TC = 25 °C IS 6.0a - 6.0a TA = 25 °C 1.9b, c - 1.9b, c Maximum Power Dissipation TC = 25 °C PD 10.4 10.4 W TC = 70 °C 6.6 6.6 TA = 25 °C 2.27b, c 2.27b, c TA = 70 °C 1.45b, c 1.45b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)d, e 260 THERMAL RESISTANCE RATINGS Parameter Symbol N-Channel P-Channel Unit Typ. Max. Typ. Max. Maximum Junction-to-Ambientb, f t ≤ 5 s RthJA 43 55 43 55 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 9.5 12 9.5 12 RoHS COMPLIANT |
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