SI5485DU-T1-GE3 datasheet(4/7 Pages) VISHAY

Il numero della parte	SI5485DU-T1-GE3

Spiegazioni elettronici	P-Channel 20-V (D-S) MOSFET

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Document Number: 73779

S-81448-Rev. C, 23-Jun-08

Vishay Siliconix

Si5485DU

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

30

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1

10

TJ = 150 °C

VSD - Source-to-Drain Voltage (V)

TJ = 25 °C

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

- 50

- 25

0

25

50

75

100

125

150

TJ - Temperature (°C)

ID = 250 µA

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

125 °C

25 °C

0.00

0.02

0.04

0.06

0.08

0.10

012345

ID = 5.9 A

VGS - Gate-to-Source Voltage (V)

0

30

40

10

20

Time (s)

1

1000

0.1

0.01

0.001

10

100

50

Safe Operating Area, Junction-to-Ambient

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

100

1

0.1

1

10

100

0.01

10

1 s

0.1

TA = 25 °C

Single Pulse

10 s

DC

10 ms

100 ms

1 ms

BVDSS limited

Limited by RDS(on)*

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